Diffusion Length Studies in CdMnTe by the Surface Photovoltage Method
نویسندگان
چکیده
منابع مشابه
Two-side surface photovoltage studies for implanted iron diffusion in silicon during rapid thermal anneal
Two-side surface photovoltage TS-SPV based on measuring SPV from both wafer sides is proposed as the approach for silicon iron contamination monitoring. TS-SPV is applied to follow diffusion of implanted iron in a lightly doped p-type silicon during rapid thermal anneal RTA . Good correlation is found between the iron distribution versus RTA conditions in the range of 375–1100 °C. The impact of...
متن کاملTemperature dependent normal and anomalous electron diffusion in porous TiO2 studied by transient surface photovoltage
A model system of nanoporous TiO2 sensitized with dye molecules at the outer surface is investigated by time resolved surface photovoltage SPV at temperatures between −120 °C and 270 °C to get information about electron diffusion over more than 10 orders of magnitude in time. The SPV transients increase in time due to independent electron diffusion and reach a maximum at a certain peak time due...
متن کاملProbing dark exciton diffusion using photovoltage
The migration of weakly and non-luminescent (dark) excitons remains an understudied subset of exciton dynamics in molecular thin films. Inaccessible via photoluminescence, these states are often probed using photocurrent methods that require efficient charge collection. Here we probe exciton harvesting in both luminescent and dark materials using a photovoltage-based technique. Transient photov...
متن کاملThe Abdus Salam International Centre for Theoretical Physics Theory and Experiment on the Surface Photovoltage Diffusion Length Measurement in Thin Silicon Wafers
A simplified theoretical model for the constant-magnitude steady-state surface photovoltage (SPV) technique is developed. Emphasis is placed on the determination of the minority carrier diffusion length L in the particular case for which the sample thickness is quite lower than the true value of L. The model is derived from the theoretical basis with the assumption that incidental light flux va...
متن کاملTransient surface photovoltage studies of bare and Ni-filled porous silicon performed in different ambients
UNLABELLED Mesoporous silicon and porous silicon/Ni nanocomposites have been investigated in this work employing light-dark surface photovoltage (SPV) transients to monitor the response of surface charge dynamics to illumination changes. The samples were prepared by anodization of a highly n-doped silicon wafer and a subsequent electrodepositing of Ni into the pores. The resulting pores were or...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Acta Physica Polonica A
سال: 1991
ISSN: 0587-4246,1898-794X
DOI: 10.12693/aphyspola.79.187